Saturday, May 21, 2011

DOCOMO develops compact multi-band power amplifier

DOCOMO develops compact multi-band power amplifier

NTT DOCOMO today announced that it has developed a prototype power amplifier for six frequency bands between 1.5 GHz and 2.5 GHz in a form factor smaller than multiple single-band power amplifiers conventionally used to provide the same function.

The amplifier’s compact size and six-band versatility, which eliminates the need for sets of single-band power amplifiers, will enable other components to use space normally occupied by the single-band power amplifiers. Power amplifiers are electronic circuits that amplify input signals to levels required for communications.

Packaged on a rectangular printed circuit board measuring just 8.05 mm x 6.2 mm, DOCOMO’s new prototype meets requirements for LTE, W-CDMA and GSM mobile communication standards, making it suitable for most domestic and international networks that use frequency bands between 1.5 GHz and 2.5 GHz.

Developed by DOCOMO with the support from Renesas Electronics Corporation, the prototype is a downsized, commercially viable version of the multi-bandthat DOCOMO announced on January 8, 2010.

DOCOMO will exhibit the amplifier during Wireless Japan 2011 at Tokyo Big Sight from May 25 to 27, and during CommunicAsia 2011 at Marina Bay Sands, Singapore from June 21 to 24.


Source

Friday, May 20, 2011

Development of CMOS LSI technology for 100Gbit ethernet optical transceivers

Development of CMOS LSI technology for 100Gbit ethernet optical transceivers

Hitachi today announced the successful prototyping of a low-power CMOS gearbox LSI conforming with international standards, which was developed for optical transceivers as part of the effort to reduce power consumption in routers and network equipment to be used in the 100 gigabit (Gbit) Ethernet (henceforth, 100GbE). Optical receivers convert optical signals and electrical signals. The 100GbE CMOS gearbox LSI functions to convert the transmission rate and number of channels, converting the 4 channel× 25 gigabit per second (henceforth, Gb/s) electrical signals received from the network into 10 channels× 10Gb/s electrical signals which can be used within the equipment, and vice versa. Until now, a high-speed gearbox LSI based on SiGe process technology was used for this purpose, however, the achievement of a low-cost and low-power LSI based on the CMOS process was desired. The prototype 100 GbE gearbox LSI fabricated employs the four-phase clock circuit scheme using CMOS process technology, and achieves operation with a low power consumption of 2W, which is approximately one-quarter that of a SiGe gearbox LSI.

This work was partially supported by the"Universal Link"project of the National Institute of Information and Communications Technology (NICT), Japan.

Network traffic continues to dramatically increase each year with the rapid development of the broadband environment and the increasing use of high-definition video contents in this age of broadcast and communication convergence. As a result, the need exists for a communication network that provides both high speed and large capacity. In current internet communication, the Ethernet with a communication speed of 10Gb/s is widely used, however, to enable even higher speed, technology for a next generation 100GbE (10 times faster than the current level) was internationally standardized in June 2010. Today, technology development to conform with this standard is being conducted worldwide however a major issue of how to reduce the increasing power consumption which grows proportionally with increasing speed, remained.

Development of CMOS LSI technology  for 100Gbit ethernet optical transceivers
Enlarge


Against this backdrop, Hitachi developed a prototype low-power CMOS gearbox LSI for optical transceivers used in routers and network equipment conforming with the 100GbE international standards. The technology developed includes the"four-phase clock circuit"which maintains the data processing speed of the LSI while reducing the circuit operating speed by 75%, and implementing this in the 25Gb/s interface circuit of the CMOS gearbox LSI. In addition, the CMOS interface (SerDes) circuit developed in 2010 bywhich has a low power consumption characteristic of 0.98mW per 1Gb/s, was employed in the prototype CMOS gearbox LSI.

Verification tests confirmed that the developed CMOS gearbox LSI operated with a power consumption of 2W; namely, a quarter that of a conventional SiGe gearbox LSI. The CMOS gearbox LSI developed can be applied to not only the 100GbE applications but also in signal transmission between LSIs in information-processing equipment such as servers and, and is expected to widely contribute to low power consumption of information-processing equipment.

These results will be presented at the International Solid-StateConference (ISSCC 2011), to be held from 20th to 24th February 2011 in San Francisco, U.S.

Details of circuit scheme developed
A four-phase-clock circuit scheme to realize lowpower consumption

In the receiving circuit of the 25Gb/s interface circuit, a circuit scheme that determines the level and phase of the received data by using four (phase) clocks with phase differences of 90 degrees, was applied. Through this approach, the interface is operated at a clock rate of 6.25GHz (a quarter of the bit rate) while maintaining the data-processing speed of the LSI, and power consumption is also reduced.

Development of CMOS LSI technology for 100Gbit ethernet optical transceivers
Development of CMOS LSI technology for 100Gbit ethernet optical transceivers
Enlarge


In addition, in a conventional receiving circuit, a receiving clock signal is generated by, first, distributing a high-speed 12.5GHz clock from a common PLL to four channels in the 25Gb/s interface circuit and then uses a phase-control circuit; a process consuming a large amount of power. A four-phase clock reducing thiswas achieved by placing a PLL in each channel of the receiving circuit, dispensing with the need for a power-hungry phase-control circuit. Further power conservation was achieved through this new circuit scheme by controlling the clock frequency allocated to each channel to a low-speed of 625MHz.


Source

Saturday, May 14, 2011

Samsung offers industry's first 64-gigabit MLC NAND flash, using toggle DDR 2.0 interface

Samsung offers industry’s first 64-gigabit MLC NAND flash, using toggle DDR 2.0 interface

Enlarge

Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, made possible by using an advanced 20 nanometer (nm) class process technology. The chip is designed to support the high-performance requirements of mobile devices such as smartphones, tablets and solid state drives (SSDs).

Equipped with a toggle DDR (Double Data Rate) 2.0 interface, the new 64Gb MLC chip can transmit data at a bandwidth of up to 400 megabit per second (Mbps). This provides a 10-fold increase over the 40Mbps Single Data Rate (SDR) NAND flash memory in widespread use today, and a three-fold boost over 133Mbps toggle DDR 1.0, 32Gb NAND flash memory, which Samsung was first to produce in 2009.

“With this 20nm-class, 64Gb, toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbps SSDs,” said Wanhoon Hong, executive vice president, memory sales&marketing,.“We will continue to aggressively develop the world's most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide.”

The high-speed 400Mbps bandwidth of toggle DDR 2.0 is expected to better support the ongoing shift toward advanced interfaces, as more mobile and consumer electronics devices requiring added performance and higher densities adopt new interfaces such as USB 3.0 and SATA 6.0Gbps,

Further, the new 64Gb MLC NAND chip offers an approximate 50-percent increase in productivity over 20nm-class 32Gb MLC NAND chips with a toggle DDR 1.0 interface (which Samsung started producing in April last year) and more than doubles the productivity of 30nm-class 32Gb MLC NAND.

According to IHS iSuppli, the worldwide NAND flash memory market will continue to steadily grow from approximately 11 billion 1 Gigabyte (GB) equivalent unitsin 2010 to 94 billion 1GB equivalent units in 2015 with a CAGR of 54 percent. In addition, shipments of NANDwith 64Gb or higher density are expected to account for approximately 70 percent of totalmemory shipments in 2012, a huge increase from the three percent level in 2010.


Source